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Preliminary Preliminary
Product Description
Stanford Microdevices' SPF-3043 is a high performance 0.25m pHEMT Gallium Arsenide FET. This 300m device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent OIP3 of 32dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications.
SPF-3043
Low Noise pHEMT GaAs FET
Qualification Pending April 2001
Product Features
35
Gain, Gmax (dB)
Typical Gain Performance
3V,20mA 5V,40mA
30 25 20 15 10 5 0 2
Gmax Gain
* DC-10 GHz Operation * Ultra Low NF: 0.25 dB @ 1 GHz 0.50 dB @ 2 GHz * High Assoc. Gain: 25 dB @ 1 GHz 22 dB @ 2 GHz * Low Current Draw for NFopt (3V,20mA) * +32 dBm OIP3, +20 dBm P1dB (5V,40mA) * Low Cost High Performance pHEMT
Applications
* LNA for Wireless Infrastructure
8 10
4 6 Frequency (GHz)
* Fixed Wireless Infrastructure * Wireless Data * Driver Stage for Low Power Applications
Symbol GMAX S 21 NFmin P 1dB OIP3 VP IDSS gmp BVGSO BVGDO Rth
Device Characteristics, T = 25C VDS=3V, IDS=20mA (unless otherw ise noted) Maximum Available Gain ZS=ZS*, ZL=ZL* Insertion Gain ZS=ZL=50 Minimum Noise Figure ZS=OPT, ZL=ZL* Output 1 dB compression point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT Pinchoff Voltage Saturated Drain Current Peak Transconductance Gate-to-Source Breakdown Voltage Gate-to-Drain Breakdown Voltage Thermal Resistance (junction to lead) f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz VDS=3V, IDS=20 mA VDS=5V, IDS=40 mA VDS=3V, IDS=20 mA VDS=5V, IDS=40 mA VDS= 2V, IDS= 0.1 mA VDS= 2V, VGS = 0V VDS= 2V, VGS @ gmp IG= 0.03 mA Drain Open, Source Grounded IG= 0.03 mA Source Open, Drain Grounded
Units dB dB dB dB m dB m V mA mS V V C/W
Min.
Typ. 25.5 22.4 18.5 18.0 0.25 0.50 15.5 20 29 32
Max.
-1.1 45 100
-0.8 67.5 150 -10 -10 150
-0.5 100
-8 -8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101772 Rev. A
1
Preliminary SPF-3043 Low Noise pHEMT GaAs FET
Typical Performance
Gain vs Frequency (3V,20mA)
35 0
Isolation
Gain vs Frequency (5V,40mA)
35 0
Isolation
Gain, Gmax (dB)
Gain, Gmax (dB)
30 25 20 15 10 5 0 2 4
-10
30 25 20 15 10 5 0 2 4
-10
Isolation (dB)
Isolation (dB)
-20
Gmax Gain
-20
Gmax Gain
-30 -40 -50 -60
-30 -40 -50 -60
6
8
10
6
8
10
Frequency (GHz) S11,S22 vs Frequency (3V,20mA)
1.0 0.5 2.0
Frequency (GHz) S11,S22 vs Frequency (5V,40mA)
1.0 0.5 2.0
0.2
S11 10 GHz 8 GHz
5.0
0.2
S11 10 GHz 8 GHz
5.0
0.0
0.2
0.5 S22
1.0
2.0
5.0
inf
0.0
0.2
0.5 S22
1.0
2.0
5.0
inf
6 GHz
0.2
1 GHz 2 GHz 4 GHz 3 GHz
6 GHz
5.0
0.2
1 GHz 2 GHz 4 GHz 3 GHz
5.0
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. The data represents typical performace of the device. Deembedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
Typical Performance
Freq (MHz ) 900 1900 VDS (V) 3 5 3 5 IDS (mA) 20 40 20 40 Fmin (dB) 0.25 0.32 0.50 0.54 OPT Mag Ang 0.79 12 0.75 12 0.62 34 0.62 33 rN 0.22 0.25 0.19 0.20 Gmax (dB) 25.5 26.5 22.4 23.3 P 1d B (dBm) 15.5 20.0 15.5 20.0 OIP3 (dBm) 29 32 29 32
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101772 Rev. A
2
Absolute Maximum Ratings
Parameter Drain Current Forward Gate Current Drain-to-Source Voltage Gate-to-Source Voltage RF Input Power Operating Temperature Storage Temperature Range Power Dissipation Operating Junction Temperature Symbol IDS IGS VDS VGS PIN TOP Tstor PDISS TJ Value 150 2 7 -3 15 -40 to +85 -40 to +150 430 +150 Unit mA mA V V dB m C C mW C
Preliminary SPF-3043 Low Noise pHEMT GaAs FET
Part Number Ordering Information
Part Number SPF-3043 Reel Siz e 7" Devices/Reel 3000
Part Symbolization The part will be symbolized with an "F3" and a Pin 1 indicator on the top surface of the package.
Pin Description
Pin #
1 2 3 4
Function
Gate GND & Source Drain GND & Source RF Input
Description
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
4
3
D e e
Package Dimensions
1 2
L
HE
C L
F3
C L
E
SYMBOL E MIN 1.15 1.85 1.80 0.80 0.80 0.00 0.10 MAX 1.35 2.25 2.40 1.10 1.00 0.10 0.40
Q1 b1 C
D HE A A2 A1
b
NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 5. DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM. ie :REVERSE TRIM/FORM. 6. PACKAGE SURFACE TO BE MIRROR FINISH.
Q1 e b b1 c L
0.65 BSC 0.25 0.55 0.10 0.10 0.40 0.70 0.18 0.30
A2 A1
A
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101772 Rev. A
3

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